熔丝位(Fuse)入门
AVR Studio 中 STK500 处理熔丝位有巨大的优势：它是以功能组合让用户配置。 这种方式与小马(PnoyProg2000,SL-ISP)相比，具有以下的优势(优势是如此明显，可以用“巨大优势”来形容)： 1. 有效避免因不熟悉熔丝位让芯片锁死 (这是初学者的恶梦) 2. 不需要靠记忆与查文档，就能配置熔丝位(这也是初学者的恶梦)这是我们网站为何推荐使用STK500下载器的又一原因。操作界面如下： (注意：下图中，打勾的表示选中，代表0。没有打勾的表示1)。
http://www.mcuzx.net/data/attachment/forum/month_1005/10050921400d2c39bfd835f767.jpg
上图的资料整理如下(该表下面有中文翻译与说明)：
On-Chip Debug Enabled; JTAG Interface Enabled; Serial program downloading (SPI) enabled; Preserve EEPROM memory through the Chip Erase cycle; Boot Flash section size=128 words Boot start address=$1F80; Boot Flash section size=256 words Boot start address=$1F00; Boot Flash section size=512 words Boot start address=$1E00; Boot Flash section size=1024 words Boot start address=$1C00; ; default valueBoot Reset vector Enabled (default address=$0000); CKOPT fuse (operation dependent of CKSEL fuses); Brown-out detection level at VCC=4.0 V; Brown-out detection level at VCC=2.7 V; Brown-out detection enabled; Ext. Clock; Start-up time: 6 CK + 0 ms; Ext. Clock; Start-up time: 6 CK + 4 ms; Ext. Clock; Start-up time: 6 CK + 64 ms; Int. RC Osc. 1 MHz; Start-up time: 6 CK + 0 ms; Int. RC Osc. 1 MHz; Start-up time: 6 CK + 4 ms; Int. RC Osc. 1 MHz; Start-up time: 6 CK + 64 ms; ; default valueInt. RC Osc. 2 MHz; Start-up time: 6 CK + 0 ms; Int. RC Osc. 2 MHz; Start-up time: 6 CK + 4 ms; Int. RC Osc. 2 MHz; Start-up time: 6 CK + 64 ms; Int. RC Osc. 4 MHz; Start-up time: 6 CK + 0 ms; Int. RC Osc. 4 MHz; Start-up time: 6 CK + 4 ms; Int. RC Osc. 4 MHz; Start-up time: 6 CK + 64 ms; Int. RC Osc. 8 MHz; Start-up time: 6 CK + 0 ms; Int. RC Osc. 8 MHz; Start-up time: 6 CK + 4 ms; Int. RC Osc. 8 MHz; Start-up time: 6 CK + 64 ms; Ext. RC Osc. - 0.9 MHz; Start-up time: 18 CK + 0 ms; Ext. RC Osc. - 0.9 MHz; Start-up time: 18 CK + 4 ms; Ext. RC Osc. - 0.9 MHz; Start-up time: 18 CK + 64 ms; Ext. RC Osc. - 0.9 MHz; Start-up time: 6 CK + 4 ms; Ext. RC Osc. 0.9 MHz - 3.0 MHz; Start-up time: 18 CK + 0 ms; Ext. RC Osc. 0.9 MHz - 3.0 MHz; Start-up time: 18 CK + 4 ms; Ext. RC Osc. 0.9 MHz - 3.0 MHz; Start-up time: 18 CK + 64 ms; Ext. RC Osc. 0.9 MHz - 3.0 MHz; Start-up time: 6 CK + 4 ms; Ext. RC Osc. 3.0 MHz - 8.0 MHz; Start-up time: 18 CK + 0 ms; Ext. RC Osc. 3.0 MHz - 8.0 MHz; Start-up time: 18 CK + 4 ms; Ext. RC Osc. 3.0 MHz - 8.0 MHz; Start-up time: 18 CK + 64 ms; Ext. RC Osc. 3.0 MHz - 8.0 MHz; Start-up time: 6 CK + 4 ms; Ext. RC Osc. 8.0 MHz - 12.0 MHz; Start-up time: 18 CK + 0 ms; Ext. RC Osc. 8.0 MHz - 12.0 MHz; Start-up time: 18 CK + 4 ms; Ext. RC Osc. 8.0 MHz - 12.0 MHz; Start-up time: 18 CK + 64 ms; Ext. RC Osc. 8.0 MHz - 12.0 MHz; Start-up time: 6 CK + 4 ms; Ext. Low-Freq. Crystal; Start-up time: 1K CK + 4 ms; Ext. Low-Freq. Crystal; Start-up time: 1K CK + 64 ms; Ext. Low-Freq. Crystal; Start-up time: 32K CK + 64 ms; Ext. Crystal/Resonator Low Freq.; Start-up time: 258 CK + 4 ms; Ext. Crystal/Resonator Low Freq.; Start-up time: 258 CK + 64 ms; Ext. Crystal/Resonator Low Freq.; Start-up time: 1K CK + 0 ms; Ext. Crystal/Resonator Low Freq.; Start-up time: 1K CK + 4 ms; Ext. Crystal/Resonator Low Freq.; Start-up time: 1K CK + 64 ms; Ext. Crystal/Resonator Low Freq.; Start-up time: 16K CK + 0 ms; Ext. Crystal/Resonator Low Freq.; Start-up time: 16K CK + 4 ms; Ext. Crystal/Resonator Low Freq.; Start-up time: 16K CK + 64 ms; Ext. Crystal/Resonator Medium Freq.; Start-up time: 258 CK + 4 ms; Ext. Crystal/Resonator Medium Freq.; Start-up time: 258 CK + 64 ms; Ext. Crystal/Resonator Medium Freq.; Start-up time: 1K CK + 0 ms; Ext. Crystal/Resonator Medium Freq.; Start-up time: 1K CK + 4 ms; Ext. Crystal/Resonator Medium Freq.; Start-up time: 1K CK + 64 ms; Ext. Crystal/Resonator Medium Freq.; Start-up time: 16K CK + 0 ms; Ext. Crystal/Resonator Medium Freq.; Start-up time: 16K CK + 4 ms; Ext. Crystal/Resonator Medium Freq.; Start-up time: 16K CK + 64 ms; Ext. Crystal/Resonator High Freq.; Start-up time: 258 CK + 4 ms; Ext. Crystal/Resonator High Freq.; Start-up time: 258 CK + 64 ms; Ext. Crystal/Resonator High Freq.; Start-up time: 1K CK + 0 ms; Ext. Crystal/Resonator High Freq.; Start-up time: 1K CK + 4 ms; Ext. Crystal/Resonator High Freq.; Start-up time: 1K CK + 64 ms; Ext. Crystal/Resonator High Freq.; Start-up time: 16K CK + 0 ms; Ext. Crystal/Resonator High Freq.; Start-up time: 16K CK + 4 ms; Ext. Crystal/Resonator High Freq.; Start-up time: 16K CK + 64 ms; 上表的英文翻译说明如下：
英文
中文
On-Chip Debug Enabled片内 调试 使能 JTAG Interface EnabledJTAG 接口 使能 Serial program downloading (SPI) enabled串行编程下载(SPI) 使能 (ISP下载时该位不能修改)Preserve EEPROM memory through the Chip Erase cycle;芯片擦除时EEPROM的内容保留Boot Flash section size=xxxx words 引导(Boot)区大小为xxx个词Boot start address=$yyyy;引导(Boot)区开始地址为 $yyyy Boot Reset vector Enabled引导(Boot)、复位 向量 使能 Brown-out detection level at VCC=xxxx V;掉电检测的电平为 VCC=xxxx 伏 Brown-out detection enabled;掉电检测使能Start-up time: xxx CK + yy ms 启动时间 xxx 个时钟周期 + yy 毫秒Ext. Clock;外部时钟Int. RC Osc.内部 RC(阻容) 振荡器Ext. RC Osc.外部 RC(阻容) 振荡器 Ext. Low-Freq. Crystal;外部 低频 晶体Ext. Crystal/Resonator Low Freq外部晶体/陶瓷振荡器 低频Ext. Crystal/Resonator Medium Freq外部晶体/陶瓷振荡器 中频Ext. Crystal/Resonator High Freq外部晶体/陶瓷振荡器 高频注：以上中文是对照 ATmega16的中、英文版本数据手册而翻译。尽量按照了官方的中文术语。
应用举例：
比如我们想使用片内的RC振荡(即不需要接晶振)，可以选择选择下面三者之一： Int. RC Osc. 8 MHz; Start-up time: 6 CK + 0 ms; Int. RC Osc. 8 MHz; Start-up time: 6 CK + 4 ms; Int. RC Osc. 8 MHz; Start-up time: 6 CK + 64 ms; 比如我们想使用外部7.3728M晶振，可以选择选择下面三者之一： Ext. Crystal/Resonator High Freq.; Start-up time: 258 CK + 4 ms; 或后面与Ext. Crystal/Resonator High Freq.;.... 有关的选择。
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